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Updated: Jul 13, 2025

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
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使用TaON/GeON双层介层的GaAs金属氧化物半导体电容器的性能提升

Lu Liu1, Wanyu Li1, Fei Li1

  • 1School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.

Nanomaterials (Basel, Switzerland)
|October 14, 2023
PubMed
概括

双TaON/GeON界面被动化层 (IPL) 显著改善了GaAs金属氧化物半导体电容器. 这种先进的门结构增强了电气性能,并减少了缺陷,以提高设备性能.

关键词:
在 GaAs MOS 设备上.在 TaON/GeON两个双层的中间层.接口状态密度密度 接口状态密度

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