金属有机CVD MoS2膜的温度依赖的结构和电气特性
Roman I Romanov1, Ivan V Zabrosaev1, Anastasia A Chouprik1
1Center of Shared Research Facilities, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141701, Russia.
Nanomaterials (Basel, Switzerland)
|October 14, 2023
概括
这项研究研究了温度如何影响由金属有机化学蒸汽沉积 (MOCVD) 培养的二硫化 (MoS2) 薄膜. 较高的温度改善了晶体结构,但增加了硫空缺,从而导致更高的电阻.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 固态物理 固态物理
背景情况:
- 超薄的二维过渡金属二甲基化物 (TMD) 薄膜对于电子应用至关重要.
- 金属有机化学蒸汽沉积 (MOCVD) 是一种用于在晶圆尺度基板上沉积高质量的TMD薄膜的关键技术.
研究的目的:
- 研究生长温度对MOCVD培养的MoS2膜的结构,化学和电子性能的影响.
- 了解结晶体大小,硫空隙和电电阻之间的关系.
主要方法:
- 原子力显微镜 (AFM) 用于表面形态学.
- 传输电子显微镜 (TEM) 用于晶体结构.
- 拉曼光谱用于结构分析.
- 射线光电子光谱 (XPS) 检测化学状态和硫空位度.
主要成果:
- 温度上升 (650-950°C) 不单调地改变了晶体的尺寸,但改善了晶体结构.
- 硫空位 (Vs) 度随着温度的变化从0.9%增加到3.6%.
- 电阻率从4kΩ·cm增加到39kΩ·cm,与Vs度和粒度边界散射相关.
结论:
- 温度显著影响MoS2膜质量和电气性能.
- 在谷物边界的硫空缺是增加电阻的首要因素.
- 优化MOCVD温度对于控制电子设备的MoS2膜特性至关重要.
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