Cr3+Y2GdSc2AlGaO12,NIR

Jihuan Xie1,2,3, Junhang Tian1,2,3, Lipeng Jiang4

  • 1State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, Beijing, 100083, China. wdzhuang@ustb.edu.cn.

概括

一种新的Y2GdSc2Al2GaO12:Cr3+ (YGSAG:Cr3+) 为近红外 (NIR) 光谱学提供了高性能. 这种新材料具有出色的辐射强度和稳定性,非常适合用于NIR光转换发光二极管 (pc-LED) 应用.