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在InGaN/GaN接口上的 (a+c) 不合适位移的分离

J Smalc-Koziorowska1, J Moneta1, G Muzioł1

  • 1Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland.

Journal of microscopy
|October 17, 2023
PubMed
概括

在InGaN/GaN层中的错位位移解离成部分位移,这对于理解半导体生长至关重要. 这种由压力驱动的解离会影响先进电子设备中松散的InGaN缓冲层的形成.

关键词:
(a+c) 位移的发生.在GaNN中获得.解离机制是一种解离机制.化物半导体的半导体

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