收缩:使用电子沉积铜氧化物制造的渐进式p通道垂直晶体管,设计具有粒度边界可调性
Sung Hyeon Jung1, Ji Sook Yang1, Young Been Kim1
1School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea. chohk@skku.edu.
Materials horizons
|October 18, 2023
概括
本收回通知涉及一项关于p通道垂直晶体管的研究. 最初的研究重点是电沉积铜氧化物和粒度边界调节性,以提高晶体管性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体设备 半导体设备
- 纳米技术 纳米技术
背景情况:
- 最初的研究研究了新的p通道垂直晶体管.
- 制造过程中使用了电沉积铜氧化物,这是一个有前途的半导体材料.
- 探索了谷物边界工程,以提高晶体管的特性.
研究的目的:
- 为了撤回先前发表的题为"使用电子沉积氧化铜制造的渐进式p通道垂直晶体管,设计具有粒度边界可调性"的文章.
- 通知科学界关于撤回这个特定的研究.
主要方法:
- 最初的研究涉及到制造p通道垂直晶体管.
- 电沉积技术用于氧化铜.
- 进行了材料特性和设备性能的表征.
主要成果:
- 最初的研究报告了这些新型晶体管的性能.
- 介绍了与颗粒边界对设备特征的影响相关的发现.
结论:
- 这篇文章是由Sung HyeonJung等人撰写的. 在"材料地平线" (Materials Horizons) 上发表的论文被收回.
- 这种撤回是对科学记录的正式通知.
相关概念视频
MOSFET: Enhancement Mode
362
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
362
Biasing of Metal-Semiconductor Junctions
261
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
261
MOSFET: Depletion Mode
368
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
368
Characteristics of MOSFET
398
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
398
Biasing of FET
289
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
289
MOSFET Amplifiers
165
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
165


