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通过在HfO₂基的memristor中加入热增强层来进行电阻开关调制

Xing Li¹, Zhe Feng¹, Jianxun Zou¹

¹School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, People's Republic of China.

|October 18, 2023

概括

这项研究探讨了用于神经形态计算的基于氧化物的memristors,具有热增强层 (TEL). 模拟显示,TEL通过通过热度调节导电丝断裂来改善多层电阻切换.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
计算机工程计算机工程

背景情况:

带有热增强层 (TEL) 的基于氧化物的memristors显示出由于改进的多层电阻开关而带来高效,高密度的神经形态计算的希望.
对于这些设备中调节电阻开关的精确机制,人们缺乏理解.

研究的目的:

为了研究包含TEL的双层氧化物memristor中的电阻切换机制.
为优化用于高密度内存和脑驱动计算系统的memristor设备提供理论指导.

主要方法:

使用有限元数值模拟分析.
一个双层的memristor结构,Pt/HfO2 ((5 nm) /Ta2O5 ((5 nm) /Pt,具有Ta2O5 TEL,是模拟的.
在重置过程中分析了氧气空位度和温度分布.

主要成果:

在重置过程中,导电丝 (CF) 的断裂发生在具有最高局部温度的接口上,受TEL的影响.
多层电阻开关是通过变化的停止电压实现的,与CF断裂间隙的扩大相关.
氧气CF的断裂位置和设备性能被发现是由TEL厚度调节的.

结论:

Ta2O5 TEL通过在接口上集中热量来有效调节电阻切换,从而促进受控的CF断裂.
该研究为设计具有定制电阻开关特征的先进memristor设备提供了理论框架.
这些发现支持了为下一代高密度内存和神经形态计算应用而设计的memristor的潜力.

关键词:

两层氧化物异构结构的两个层.有限元素模拟的模拟.纪念馆是为了纪念.多层电阻开关多层电阻开关热增强层是一种热增强层.

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