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Updated: Jul 13, 2025

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

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高流动性和偏差稳定的场效应晶体管,基于无形式二锡酸罗夫斯基特

Zhiwen Zhou1, Qihua Li2, Mojun Chen3

  • 1Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China.

ACS energy letters
|October 19, 2023
PubMed
概括

我们使用增材工程策略开发了基于锡的稳定矿晶体管. 化添加剂增强膜结晶并减少缺陷,从而产生高性能和耐用的场效应晶体管 (FET).

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相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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