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Updated: Jun 24, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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通过接口工程诱导的Hf0.5Zr0.5O2铁电膜的增强开关可靠性

Fei Huang1, Balreen Saini2, Zhouchangwan Yu1

  • 1Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.

ACS applied materials & interfaces
|October 19, 2023
PubMed
概括

在氧化 (HZO) 铁电电容器中引入超薄的氧化缓冲层几乎可以消除极化"唤醒"效应. 这一进步提高了HZO薄膜的稳定性,用于先进的半导体内存应用.

关键词:
铁电机电机电机电机电机电机氧化甲氧化物 氧化甲接口工程 接口工程 接口工程阶段过渡 阶段过渡一个叫醒-up-up.

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