中波共振腔红外探测器 (RCID) 具有抑制的背景噪声
Optics express
|October 20, 2023
概括
这项研究引入了一种新的共振腔红外探测器 (RCID),使用InAsSb/InAs超级网格. 在较低的温度下,RCID表现出高的特定检测能力,通过减少不必要的背景噪声,超过宽带检测器的性能.
科学领域:
- 光电学是指光电子产品.
- 红外探测 红外探测 红外探测
- 半导体超级格子 半导体超级格子
背景情况:
- 目前的红外探测器面临着热背景噪声和暗电流的挑战,特别是在更高的温度下.
- 像HgCdTe这样的最先进的宽带探测器可以在室温下受到暗电流的限制.
- 优化探测器性能需要在各种操作条件下平衡灵敏度与降噪.
研究的目的:
- 开发和描述一种新型的共振腔红外探测器 (RCID),使用InAsSb/InAs超晶格吸收器.
- 评估RCID的性能,重点关注不同温度下的外部量子效率 (EQE) 和特定检测能力 (D*).
- 将RCID的性能与最先进的宽带探测器进行比较,特别是在噪声源和操作温度效应方面.
主要方法:
- 采用薄的InAsSb/InAs超晶格吸收器,GaAs/AlGaAs分布式布拉格反射器 (DBR) 底镜和Ge/SiO2/Ge顶镜的RCID的制造.
- 在低偏差电压 (150 mV) 下,在约4.6微米的共振波长 (λres) 上测量EQE和光谱线宽.
- 在现实的系统条件下 (f/4光学,300 K场景) 和在降低的温度下 (125 K) 估计热背景电流和特定检测能力 (D*).
主要成果:
- RCID在 λres ≈ 4.6 μm 的高EQE 58% 实现了狭窄的线宽 (1927 nm).
- 在125K时,估计的特异检测能力 (D*) 达到5.5 × 10^12厘米Hz^1⁄2/W,超过宽带HgCdTe设备的3×以上,这是由于压抑的背景噪声.
- 该探测器在非共振波长 (3.95.5μm) 上显示出显著低的EQE (≤1%),这对于其在较低温度下性能优势至关重要.
结论:
- 与宽带探测器相比,开发的RCID在125K时表现出优异的性能,主要是因为它能够最大限度地降低背景噪声.
- 接触层和吸收层中的冲击电离似乎是环境温度附近的主导暗电流机制.
- 预计未来的设计修改将进一步提高D*在100300K温度范围内.
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