水氧化在半导体光电极上的从顺序到协同的质子合电子转移
Siqin Liu1,2, Lei Wu1,2, Daojian Tang1,2
1Key Laboratory of Photochemistry, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Journal of the American Chemical Society
|October 20, 2023
概括
质子合电子转移 (PCET) 限制了光电极上的水氧化. 用-铁氧化氧化物 (NiFe-OOH) 修改表面可以通过更快的质子转移来提高动力,从而显著提高水氧化效率.
科学领域:
- 材料科学
- 电化学
- 光催化
背景情况:
- 在半导体光电极上有效氧化水对于可再生能源技术至关重要.
- 质子合电子转移 (PCET) 是水氧化的关键过程,但其动力学可能是一个瓶.
- 了解PCET中的速度限制步骤对于设计改进的光电极材料至关重要.
研究的目的:
- 在各种半导体光电极上研究水氧化的质子合电子转移 (PCET) 动力学.
- 确定典型光电极的水氧化速度限制因素.
- 探索-铁氧化 (NiFe-OOH) 作为增强水氧化的PCET调节器的作用.
主要方法:
- 对H2O分子的速率定律分析
- H/D动态同位素效应 (KIE) 的测量.
- 对包括α-Fe2O3,BiVO4,TiO2,Au/TiO2和NiFe-OOH/Si在内的光电极进行光谱研究.
主要成果:
- 观察到H2O的普遍半级动力学,表明顺序性质子电子转移途径限制了水的氧化.
- 用NiFe-OOH对表面进行修改,使动力学变化为第一阶段,并显著增加H/D KIE值.
- NiFe-OOH促进了水氧化的循环频率增加一级.
结论:
- 序列性质子电子转移途径是许多半导体光电极的水氧化速度限制因素.
- 铁氧化 (NiFe-OOH) 作为有效的PCET调节器,克服了动力限制.
- 速率定律分析为优化水氧化催化中的PCET动力学提供了有价值的策略.
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