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Updated: Jul 12, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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通过预设门时间来提高高分辨率,低能电子衍射测量的扫描速度

Anna J Kny1, Moritz Sokolowski1, Peter Kury2

  • 1Clausius-Institut für Physikalische und Theoretische Chemie, Universität Bonn, Wegelerstr. 12, 53115 Bonn, Germany.

The Review of scientific instruments
|October 20, 2023
PubMed
概括

一个新的数据采集程序通过专注于高强度斑点来加速低能电子衍射 (LEED). 这种方法显著减少了k空间数据的测量时间,提高了效率.

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Characterization of Ultra-fine Grained and Nanocrystalline Materials Using Transmission Kikuchi Diffraction09:13

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相关概念视频

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
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