可重新配置的多功能范德瓦尔斯铁电设备和逻辑电路
Ankita Ram1, Krishna Maity1, Cédric Marchand2
1Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France.
ACS nano
|October 21, 2023
概括
可重新配置的铁电场效应晶体管 (Re-FeFET) 能够实现多功能,非挥发性的内存逻辑电路. 这些2D范德瓦尔斯设备为下一代计算和机器学习硬件提供紧,节能的解决方案.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术纳米技术
背景情况:
- 下一代计算硬件寻求传统·诺伊曼架构的替代方案.
- 半导体兴奋剂状态的铁电工程为新的计算范式提供了潜力.
- 可重新配置的设备在先进的电子应用中越来越受欢迎.
研究的目的:
- 证明可重新配置的铁电场效应晶体管 (Re-FeFET) 适用于设计非易失性,可重新配置的内存逻辑电路的适用性.
- 通过调节2D材料中的能量景观来探索Re-FeFETs的多功能功能.
- 展示Re-FeFETs在能源采集和紧逻辑实现方面的潜力.
主要方法:
- 使用2D二化 (WSe2) 同体连接,通过铁电铜二酸盐 (CuInP2S6) 分裂门调节.
- 通过编程门状态来控制FeFET操作模式 (p,n,双极).
- 在电路中实现 Re-FeFET,以模拟逻辑函数 (NAND/AND,XNOR) 并评估能量收集能力.
主要成果:
- 在p,n和双极FeFET模式之间实现开关,开关比率>10^6和hysteresis窗口高达10V.
- 从欧米式到二极管的可调整的同位结行为被证明具有10^4.4的整正比.
- 与CMOS相比,展示了可重新配置的逻辑函数 (NAND/AND,XNOR),具有较长的保留时间 (>10^4秒) 和显著的晶体管数量减少 (高达80%).
结论:
- Re-FeFETs为多功能,非挥发性逻辑内存电路提供了一个有前途的平台.
- 由于在二极管模式下高效的光生成载体分离,这些设备具有收集能源的潜力.
- 2D范德瓦尔斯Re-FeFET适用于More-than-Moore和beyond-Moore电子,特别是用于节能内存计算和AI硬件.
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