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高质量的无形碳化物用于混合光子集成,在低温下沉积

Bruno Lopez-Rodriguez¹, Roald van der Kolk², Samarth Aggarwal³

¹Department of Imaging Physics (ImPhys), Faculty of Applied Sciences, Delft University of Technology, Delft 2628 CJ, The Netherlands.

ACS photonics

|October 23, 2023

概括

我们开发了一种将碳化 (SiC) 集成到光子电路中的新方法. 这种方法使高性能光学设备成为可能,并为混合光子集成铺平了道路.

科学领域:

综合光子学综合光子学
材料科学是一种材料科学.
光电学是指光电子产品.

背景情况:

集成光子学在芯片上结合了光学功能.
在混合平台中组合不同的材料是具有挑战性的,因为处理不兼容性.
碳化 (SiC) 具有理想的光学性能,但很难整合.

研究的目的:

展示一种用于在低温下沉积高指数无形碳化 (a-SiC) 薄膜的新方法.
通过制造和表征光子波导和环共振器来验证a-SiC平台的性能.
展示这个a-SiC平台与其他低损耗光子材料异质集成的潜力.

主要方法:

在150°C下沉积高指数无形碳化 (a-SiC) 薄膜.
使用a-SiC平台制造标准光子波导和单模环共振器.
光学性能的表征,包括内在的质量因素和光学损失.

主要成果:

在150°C的低温下成功沉积了高指数a-SiC薄膜.
实现了环共振器的高内在质量系数 (Q_int),范围从4.7×105到5.7×105不等.
测量的低光学损失在0.78和1.06dB/cm之间,表明一个高性能平台.

结论:

开发的低温a-SiC沉积技术使SiC能够有效地集成到光子平台中.
制造的设备表现出卓越的光学性能,适合先进的光子应用.
这种a-SiC平台有望在未来与SiN和LiNbO₃等超低损耗材料进行异质集成.

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