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Updated: Jul 12, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Published on: November 28, 2017

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过渡金属二甲基化物/碳异构结构的界面工程,用于电化学能源应用

Biao Chen1,2, Simi Sui1,3, Fang He1

  • 1School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Key Laboratory of Advanced Ceramics and Machining Technology (Ministry of Education), Tianjin University, Tianjin, 300350, People's Republic of China. fanghe@tju.edu.cn.

Chemical Society reviews
|October 23, 2023
PubMed
概括

本综述探讨了用于电化学能量转换 (EEC) 和储存 (EES) 装置的过渡金属二二二/碳 (TMDC/C) 异构结构的接口工程. 它强调了定向,堆叠和兴奋剂策略,以提高性能.

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相关概念视频

Interfacial Electrochemical Methods: Overview01:06

Interfacial Electrochemical Methods: Overview

Interfacial electrochemical methods focus on the phenomena occurring at the boundary between an electrode and a solution, as opposed to bulk methods that concentrate on the solution's overall properties. These interfacial methods are classified as either static or dynamic based on the presence of a nonzero current in the electrochemical cell and the consistency of analyte concentrations. Static methods, such as potentiometry, measure the cell's potential without any significant current...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
355