层次 Cu2Se 的电子结构的第一原理研究
Ju-Xia Yi1, Rui-Zi Zhang1, Yu-Yang Zhang1
1University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
概括
有层的铜化物 (Cu2Se) 显示出对计算方法敏感的独特电子特性. LDA+U计算准确地预测了这些特性,这些特性可以通过应变来调整.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学的计算化学
背景情况:
- 铜化物 (Cu2Se) 对于热电和光电子设备至关重要.
- 多层Cu2Se具有独特的特性,如高载体流动性和光导性.
研究的目的:
- 系统地研究 Cu2Se 层的电子结构,使用第一原理计算.
- 评估各种交换相关函数的准确性和现场库伦相互作用校正的影响.
主要方法:
- 第一原则计算.第一原则计算.
- 使用各种交换相关函数 (LDA+U,混合函数).
- 调查平面内双轴应变和旋转轨道合 (SOC) 的影响.
主要成果:
- 分层Cu2Se的电子结构对所选的函数和库伦相互作用校正非常敏感.
- 与混合功能和G0W0方法相比,LDA+U功能提供相对准确的电子结构.
- 在平面内双轴应变诱导金属到半导体的过渡,由于改变了原子轨道杂交.
- 微弱的SOC效应归因于Cu2Se的空间反向对称性.
结论:
- LDA+U是一个适合用于研究分层Cu2Se电子结构的函数.
- 应变工程提供了一个调整 Cu2Se.Se 分层电子属性的途径.
- 了解SOC效应对于应用至关重要,空间反向对称性发挥着关键作用.
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