室温轨道转移扭矩使范德瓦尔斯磁电阻记忆成为可能
Zhen-Cun Pan1, Dong Li2, Xing-Guo Ye1
1State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China.
Science bulletin
|October 23, 2023
概括
研究人员使用轨道转移扭矩 (OTT) 效应开发了全新的2D磁定制随机访问存储器 (MRAM). 这项技术使得低功耗,高性能内存应用的无磁场磁化切换成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 非挥发性磁力复原性随机访问存储器 (MRAM) 对于新兴的计算范式,如内存和神经形态计算至关重要.
- 二维 (2D) 材料和范德瓦尔斯异构结构为先进的MRAM开发提供了独特的特性.
研究的目的:
- 报告所有2D磁电阻记忆器件的发展情况.
- 为了演示在室温下全电气数据读写的情况.
- 为MRAM应用研究新型轨道转移扭矩 (OTT) 效应.
主要方法:
- 制造用于MRAM的WTe2/Fe3GaTe2/BN/Fe3GaTe2异构结构.
- 使用道磁电阻来读取数据.
- 采用OTT效应通过电流诱导的轨道运动极化来写数据.
主要成果:
- 在所有2D异构结构中,在室温下实现全电数据读写.
- 使用OTT效应证明了无磁场垂直磁化切换.
- 展示了OTT-MRAM在低功耗,高性能内存方面的潜力.
结论:
- 基于二维材料开发的OTT-MRAM为下一代内存技术提供了一个有前途的途径.
- OTT效应提供了基于旋转的扭矩的替代方案,利用轨道时刻进行高效的切换.
- 这项研究推进了将二维材料集成到功能性内存设备中的进展.
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