基于铁电的哈夫尼亚M3D FeTFT在极低温度下化,以及用于内存计算应用的TCAM电池
Hongrae Joh1, Sooji Nam2, Minhyun Jung1
1The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
ACS applied materials & interfaces
|October 24, 2023
概括
聚焦微波回火使得单立体3D叠加铁电薄膜晶体管 (FeTFT) 的低温制造成为可能,用于高密度内存计算 (CIM) 应用. 这克服了3D集成中的热问题,为节能AI硬件铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机工程 计算机工程
背景情况:
- ·诺伊曼架构在处理速度和能源效率方面面临瓶.
- 推进人工智能 (AI) 需要高密度内存解决方案来存储数十亿个参数.
- 单立体三维 (M3D) 堆叠铁电薄膜晶体管 (FeTFT) 为高密度内存计算 (CIM) 提供了一个有前途的途径.
研究的目的:
- 开发适用于CIM应用的M3D集成FeTFT的低温制造工艺.
- 在M3D集成中解决与高温回火相关的热挑战.
- 在CIM设备中展示M3D堆叠FeTFT的性能和潜力.
主要方法:
- 使用聚焦微波化 (FMA) 在250°C的氧化FeTFT的M3D集成中.
- 制造金属铁电金属绝缘体半导体 (MFMIS) 的FeTFTs.
- 采用多频电容电压测量和核化有限切换模型分析来描述设备属性.
主要成果:
- 在FMA FeTFTs中实现了3.2V的大内存窗口,耐力超过10^6周期,保留时间为10^5s.
- 在M3D结构的顶层和底层成功分析了FeTFT的电特性.
- 演示了第一个基于FeTFT的垂直堆叠的三元内容可定位存储器 (TCAM) 细胞,用于CIM.
结论:
- 聚焦微波回火是一种有效的低温方法,用于FeTFT的M3D集成.
- 开发的M3D堆叠的FeTFT表现出非常好的内存特性,适合CIM.
- 这项技术可以开发高密度,高能效的内存和AI的CIM解决方案.
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