无电场旋转轨道扭矩诱导磁化切换在IrMn/CoTb边框中,具有自发的平面交换偏差
Ruobai Liu1, Jiarui Chen1, Zhuoyi Li2
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China.
ACS applied materials & interfaces
|October 24, 2023
概括
这项研究证明了在IrMn/CoTb双层中由旋转轨道扭矩 (SOT) 诱导的无磁场磁化切换. 该材料展示了多态切换,显示了先进信息存储和神经形态计算应用的前景.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 这就是Spintronics.
背景情况:
- 旋转轨道扭矩 (SOT) 是磁性材料中高效磁化切换的关键机制.
- 铁磁材料由于其独特的磁性特性,为下一代数据存储提供了潜力.
- 在没有外部磁场的情况下控制磁化开关对于设备微型化至关重要.
研究的目的:
- 为了证明SOT诱导的无磁场磁化切换在垂直磁化的CoTb铁磁体中.
- 调查飞机内交换偏差 (IEB) 在实现这种切换中的作用.
- 探索该系统在多状态存储和神经形态计算方面的潜力.
主要方法:
- 制造具有受控接口特性的IrMn/CoTb双层.
- 利用同热结晶,在IrMn层中诱导自发的平面内交换偏差 (IEB).
- 使用第二波电压测量方法来量化SOT效应和旋转霍尔角.
主要成果:
- 在IrMn/CoTb双层的CoTb层中实现了SOT诱导的无场磁化切换.
- 观察到一个显著的SOT有效场和一个大的有效旋转霍尔角度.
- 证明了多态磁切换行为,在零场时具有变化的电流脉冲幅度.
结论:
- 具有自发IEB的IrMn/CoTb双层可以实现高效,无磁场的SOT磁化切换.
- 观察到的多态切换行为类似于突触重量更新,适合神经形态网络.
- 该系统为开发先进的多层存储和神经形态计算设备提供了一个有前途的平台.
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