通过压抑电荷注入到氧化物memristors的局部导电路的定义,用于稳定的实用硬件神经网络
Hyeongwook Kim1, Jihwan Lee1, Hyun Wook Kim1
1School of Electronics Engineering, and School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 702-701, Republic of Korea.
ACS applied materials & interfaces
|October 24, 2023
概括
研究人员通过控制导电丝 (CF) 形成,为神经形态系统开发了氧化物记忆器. 在电成型过程中抑制电荷注入导致更窄的CF,增强设备稳定性,并使硬件神经网络中可靠的图像识别成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 氧化物记忆器是神经形态系统的关键,其电阻切换由基于氧气空位的导电纤维 (CF) 驱动.
- 控制CF结构对于memristor性能至关重要,但在不改变设备材料的情况下仍然具有挑战性.
研究的目的:
- 展示一种在氧化物记忆器中定位导电丝分布的方法.
- 为了提高电阻开关特征的稳定性和可重复性.
主要方法:
- 在电成型过程中抑制电荷注入,以控制CF的形成.
- 分析减少电荷注入对CF宽度和设备性能的影响.
- 使用用于图像识别的开发的memristors构建一个硬件神经网络.
主要成果:
- 在电成型过程中电荷注入的减少导致导电丝分布更窄.
- 这种局部化导致了显著更可复制和稳定的电阻开关特性.
- 记忆器可靠地作为硬件神经网络中的突触组件运行,在长时间内进行复杂的图像识别.
结论:
- 通过抑制电荷注入控制导电丝的定位是一种有效的策略,可以提高氧化物memristor的可靠性.
- 这些稳定的memristors显示了实际的神经形态和人工智能系统的巨大潜力.
- 开发的方法为强大的突触记忆元件提供了一条途径,而不会影响材料兼容性.
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