相关实验视频

Updated: Jul 12, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.7K

可调节相位操纵增强的极化和导电损失,使得等级的3D微观球样MoS2具有高效的微波吸收

Zhi Song1, Zicheng Xiang1, Xiaoyan Sun1

  • 1College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China.

ACS applied materials & interfaces
|October 25, 2023
PubMed
概括

研究人员通过引入导电性1T相和3D微球结构来增强二硫化物 (MoS2) 的微波吸收. 这一策略改善了介电损失和阻抗匹配,以获得卓越的性能.

关键词:
1T-MoS2 的使用.介电性质 介电性质是指介电性质.电磁波的吸收电磁波的吸收表面两极分化放松放松.阶段操纵 阶段操纵

更多相关视频

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.4K
Simulation, Fabrication and Characterization of THz Metamaterial Absorbers13:44

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Published on: December 27, 2012

15.4K

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
362
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
812