对于不对称超级电容器应用的PN异质连接NiO/ZnO纳米线基电极
Reyaz Ahmad1, Aamir Sohail1, Mahvesh Yousuf1
1Department of Physics, National Institute of Technology Srinagar, Hazratbal, Srinagar 190006, (J&K), India.
Nanotechnology
|October 25, 2023
概括
水热合成的氧化/氧化 (NiO/ZnO) 纳米线显示出优越的储能能力. 这些新的纳米线电极为先进的超级电容器应用提供高特异电容和出色的稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术纳米技术
背景情况:
- 基于的氧化物是具有可调节纳米结构和氧化还原活性的具有成本效益的材料.
- 开发高效的电极材料对于推进储能技术至关重要.
研究的目的:
- 研究用于储能的水热合成NiO/ZnO纳米线的电容性行为.
- 分析NiO/ZnO纳米线电极的电化学性能及其在超级电容器中的应用.
主要方法:
- NiO/ZnO纳米线与p-n异质连接的水热合成.
- 电化学表征包括循环电压测量和电化学阻抗光谱学.
- 一个固态非对称超级电容器的制造和测试.
主要成果:
- 与裸体NiO纳米线相比,NiO/ZnO纳米线电极表现出显著增强的电化学性能.
- 在5mVs-1.1的扫描速率下,达到1135 Fg-1的高特异电容.
- 基于NiO/ZnO的超级电容器表现出极好的电容保持 (18%的下降在6000个循环后),能量密度为23Whkg-1和功率密度为614Wkg-1.
结论:
- NiO/ZnO异质连接,高表面积和多孔纳米线架构的协同效应有助于优越的电化学性能.
- NiO/ZnO纳米线作为高性能超级电容器设备的先进电极材料具有很大的前景.
更多相关视频
10:39Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal
Published on: January 15, 2016
12.6K
08:59Synthesizing a Gel Polymer Electrolyte for Supercapacitors, Assembling a Supercapacitor Using a Coin Cell, and Measuring Gel Electrolyte Performance
Published on: November 30, 2022
4.5K
相关概念视频
P-N junction
545
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
545
Biasing of P-N Junction
557
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
557
MOS Capacitor
812
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
812
Dielectric Polarization in a Capacitor
4.7K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
4.7K
Capacitor With A Dielectric
4.0K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
4.0K
