侧门铁电场效应晶体管 (LG-FeFET) 使用α-In2Se3用于堆叠的内存计算阵列
Sangyong Park1,2, Dongyoung Lee3, Juncheol Kang3
1Flash Technology Development Team, R&D Center, Device Solutions, Samsung Electronics Co. Ltd, Hwasung, 18448, Korea.
Nature communications
|October 25, 2023
概括
我们开发了一种高密度堆叠的铁电记忆阵列,使用侧门铁电场效应晶体管 (LG-FeFET) 进行高效的内存计算. 这种新型设备可以实现更快的数据处理,具有出色的性能和耐久性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 内存计算通过避免数据传输提供了高效的数据处理.
- 高密度内存阵列对于在此类系统中管理大量数据量至关重要.
- 现有的解决方案在实现所需的密度和集成方面面临挑战.
研究的目的:
- 介绍一款用于内存计算的新型堆叠铁电式内存阵列.
- 在高密度内存应用中展示横门铁电场效应晶体管 (LG-FeFET) 的潜力.
- 为了验证3D堆叠结构的可行性,以实现高效的计算任务.
主要方法:
- 使用侧门铁电场效应晶体管 (LG-FeFETs) 制造堆叠的铁电记忆阵列.
- 利用α-In2Se3的相互锁定效应来控制通道导电.
- 描述LG-FeFET的特性,包括内存窗口,切换,保留和耐久性.
- 设计和实施一个3D堆叠的内存结构.
- 通过多次积累 (MAC) 操作验证结构的性能.
主要成果:
- LG-FeFET 具有广泛的内存窗口,有效的铁电切换和长时间的保留时间 (>3×10^4 秒).
- 这些设备具有很高的耐用性 (>10^5周期).
- 由于降低了设备高度,可以实现垂直堆叠的结构,简化了集成.
- 一个双层堆叠的内存配置成功执行了多重积累 (MAC) 操作.
结论:
- 开发的基于LG-FeFET的堆叠内存阵列是高密度内存计算的有希望的候选者.
- 该设备的特性和适合3D集成的特性解决了数据密集型计算中的关键挑战.
- 这项技术为更高效,更强大的计算系统铺平了道路.
相关概念视频
01:29Field Effect Transistor
438
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
438
01:25MOS Capacitor
812
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
812
01:22MOSFET: Enhancement Mode
362
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
362
01:22Biasing of FET
289
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
289