SbOx /Sb2 Te3多层的低温ALD具有增强的热电性能
Jun Yang1,2, Samik Mukherjee1,3, Sebastian Lehmann1
1Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research, 01069, Dresden, Germany.
Small (Weinheim an der Bergstrasse, Germany)
|October 26, 2023
概括
使用 telluride 和氧化物薄膜的超级晶格结构显著增强热电特性. 这种新的方法可以在室温下优化功率因子和电导率.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 能源转换 能源转换
背景情况:
- 纳米级超级格子 (SL) 结构对于改善薄膜的热电特性至关重要.
- 化 (Sb2 Te3) 是 TE 应用的一个有前途的材料.
研究的目的:
- 通过原子层沉积 (ALD) 使用亚纳米级SbOx层合成Sb2 Te3薄膜.
- 为了研究不同SL结构对TE性能的影响.
- 为了在低合成温度下获得增强的热电特性.
主要方法:
- 在80°C的原子层沉积 (ALD) 形成Sb2 Te3/SbOx超级.
- 通过改变Sb2 Te3和SbOx的循环数量来定制SL结构.
- 热电性质的表征,包括功率因子和电导率.
主要成果:
- 在室温下实现了520.8μW m-1 K-2的显著功率系数,SbOx:Sb2 Te3循环比为1:1000.
- 最高的电导率达到了339.8 S cm-1.
- SbOx层起到了潜在的障碍作用,过了低能电荷载体,提高了Seebeck系数,同时降低了导热率.
结论:
- 这种Sb2 Te3/SbOx超级晶格结构有效地提高了热电性能.
- ALD为制造先进的 TE 材料提供了一个可行的低温路线.
- 这项工作为设计高性能SL结构TE材料和设备提供了新的见解.
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