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高度可靠的范德瓦尔斯记忆,由单个2D充电陷中介增强

Chao Liu^1,2, Jie Pan¹, Qihui Yuan²

¹School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China.

Advanced materials (Deerfield Beach, Fla.)

|October 26, 2023

概括

二维半导体化 (PbI2) 显示出作为先进存储器设备的充电陷材料的前景. 这一发现简化了创建高性能非易失性记忆和人工突触的过程.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
固态物理固态物理

背景情况:

高效的电荷存储对于非挥发性记忆和人工突触应用至关重要.
由于其原子均接口,二维 (2D) 材料提供了紧和可靠的内存的潜力.
然而,二维材料尚未被探索为充电陷介质.

研究的目的:

研究二维半导体材料作为电荷陷介质的潜力.
为了证明化 (PbI2) 在非易失性记忆和人工突触装置中的有效性.
探索PbI2在先进电子应用中的独特特性.

主要方法:

一个MoS2/PbI2异构装置的制造.
描述设备的内存性能,包括内存窗口,写入速度,开关比,多级别内存能力,耐用性和保留.
对原生空缺在PbI2的离子活性中的作用的分析.

主要成果:

该MoS2/PbI2设备显示出一个大的内存窗口 (120V),快速的写入速度 (5微秒),以及高的开关比率 (~10^6).
该设备展示了多级记忆 (超过8个状态),高可靠性 (10^4周期耐久性) 和良好的保留 (1.2 × 10^4秒).
确定PbI2是一种优秀的充电陷材料,不需要复杂的合成或缺陷工程.

结论:

二维半导体PbI2是一种高效的充电陷材料,用于非易失性记忆和人工突触.
基于 PbI2 的设备很容易制造,并提供卓越的性能指标.
由空缺产生的PbI2的离子活性,使集成和多功能设备的多功能范德瓦尔斯异构结构成为可能.

关键词:

两维材料是二维材料.在PbI2中,PbI2是PbI2.人工突触 (Synapses) 是一个人工突触.充电陷的记忆陷是一个充电陷.

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