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LiNbO3的混合干燥和湿蚀刻,具有90°蚀刻角度和出色的电气性能的域墙内存设备

Bowen Shen1, Xiaojun Tan1, Chao Wang1

  • 1School of Microelectronics, Fudan University, Shanghai 200433, China.

ACS applied materials & interfaces
|October 26, 2023
PubMed
概括

一种新的混合蚀刻技术改进了酸 (LiNbO3) 铁电域墙壁的记忆. 这种方法提高了性能,并使下一代低能耗电子产品的纳米规模集成成为可能.

关键词:
这就是LiNbO3的含量.域名墙 域名墙蚀刻 蚀刻 蚀刻 是一种方法.铁电式记忆器是什么意思纳米设备是一个纳米设备.氧气空缺的地方是空缺的.

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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...