在互补的金属氧化物半导体兼容道屏障中取得的进步,为在恶劣环境中的生物灵感神经网络设计了充电捕获突触晶体管
Dong-Hee Lee1, Hamin Park2, Won-Ju Cho1
1Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea.
Biomimetics (Basel, Switzerland)
|October 27, 2023
概括
这项研究引入了使用在绝缘体技术的高温人工突触. 新型晶体管设计使可靠的突触功能和神经形态计算的模式识别成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 神经科学是一个神经科学.
背景情况:
- 人工突触的发展对于神经形态计算至关重要.
- 现有的突触晶体管面临着高温操作和可靠性的挑战.
- 在绝缘体 (SOI) 技术为先进的电子设备提供了潜力.
研究的目的:
- 为高温人工突触应用提出和描述基于SOI的充电捕获突触晶体管.
- 研究工程道屏障和高k介电物的对突触晶体管性能的影响.
- 评估设备的可靠性,学习能力和适合神经形态计算的适用性.
主要方法:
- 基于SOI的电荷捕获晶体管的制造,具有SiO2 / Si3N4 / SiO2道屏障,HfO2捕获层和Al2O3阻断层.
- 突触行为的表征,包括在不同温度 (25,75,125°C) 和短门刺激 (100μs) 下长期的增强/减弱.
- 使用MNIST数据集分析电导率变异性,用于充电陷激活能量的阿雷尼乌斯关系,以及模式识别模拟.
主要成果:
- 拟议的晶体管在高温 (高达125°C) 和短门刺激下显示出可靠的长期增强/减弱.
- 导电量调制可靠地实现,变异性与门刺激数量和刺激后突触电流 (EPSC) 相关.
- 导出了充电陷激活能量,模式识别模拟显示了有希望的神经形态计算能力.
结论:
- 基于SOI的充电捕获突触晶体管与工程道屏障和高k介电材料适用于高温人工突触应用.
- 该设备具有很高的可靠性,并使人工神经网络能够进行内存计算.
- 这项工作有助于推进强大的和高效的神经形态计算硬件.
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