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在无压陶中,具有移动过渡金属缺陷的优越电机兼容性

Yiming Guan1, Yiyang Sun2, Jie Wang1

  • 1State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P.R. China.

ACS applied materials & interfaces
|October 27, 2023
PubMed
概括

这项研究通过热处理来处理缺陷来增强压电陶,改善压电系数和机械质量因子. 这一突破为工业应用提供了无替代品.

关键词:
缺陷扩散的缺陷扩散.缺陷相互作用 缺陷相互作用具有高电机性能的高电机性能.压电陶材料 - 压电陶缺点点是指缺点点的缺陷点,是指缺点点的缺陷点.

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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