0.8V,14.76nVrms,AFE使45CMOS穿

Esther Tamilarasan1, Gracia Nirmala Rani Duraisamy1, Muthu Kumaran Elangovan2

  • 1Department of Electronics and Communication, Thigarajar College of Engineering, Madurai 625005, Tamil Nadu, India.

Micromachines
|October 28, 2023
PubMed
概括

对于可穿戴医疗设备而言,新的基于多重处理器的模拟前端 (AFE) 显著降低了功耗和芯片大小. 这种创新设计提高了使用生物电信号持续健康监测的可靠性.

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