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Updated: Jul 12, 2025

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总电离剂量对GaN电源码设备的值电压的影响

Hao Wu1, Xiaojun Fu1, Jun Luo2

  • 1National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 401332, China.

Micromachines
|October 28, 2023
PubMed
概括

这项研究研究了对化 (GaN) Cascode 设备的总电离剂量 (TID) 影响. 经过辐射加固的MOSFET提高了TID耐受性,火有助于恢复值电压,显示了GaN.

关键词:
现货代码设备的使用情况在 GaN MISHEMT 装置中,门电压转移的门电压转移是什么总的电离剂量效应的电离剂量效应.

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