SEU 硬化 D 翻转式设计,头部区域较低
Chenyu Yin1, Yulun Zhou1, Hongxia Liu1
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|October 28, 2023
概括
一个新的D翻转 (DFF) 设计增强了对单次事件干扰 (SEU) 的辐射保护. 与传统设计相比,这种硬化的DFF提供了更好的SEU免疫力和更低的功耗.
科学领域:
- 数字电子数字电子数字电子
- 集成电路设计 集成电路设计
- 辐射硬化 辐射硬化
背景情况:
- D flip-flops (DFFs) 是序列逻辑的基础,但容易受到由内部交叉合逆变器引起的高能粒子引起的单事件扰乱 (SEUs).
- SEUs可以损坏存储在翻页机中的数据,导致数字电路中的错误.
研究的目的:
- 提出一种新的D翻转式结构,增强单次事件颠覆 (SEU) 防御的能力.
- 评估拟议的DFF与传统的DFF和双互锁存储元件 (DICE) 在SEU免疫性,面积和功耗方面的性能.
主要方法:
- 引入一个不对称的方案,主-奴隶锁采用不同的硬化结构.
- 拟议的DFF与传统的DFF和DICE结构在相同的运行条件下进行比较分析.
- 评估SEU值,晶体管数量 (面积成本) 和功耗 (平均值和峰值).
主要成果:
- 拟议的DFF与传统的D flip-flop相比,SEU值提高了10倍.
- 新结构需要的晶体管比DICE结构少了6个,从而降低了面积成本.
- 与DICE电路相比,平均和峰值功耗分别降低了9.8%和18.8%,与DICE电路相比.
结论:
- 拟议的非对称的D翻转式设计提供了显著改善的SEU容忍度.
- 这种DFF在电路速度和SEU硬化之间提供了有利的权衡,使其适用于易受辐射的环境.
- 该设计在面积和功率效率方面表现出优势,而不是像DICE这样的现有硬化翻转式解决方案.
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