对阿尔法辐射对GaN粒子探测器影响的基于模拟的分析
Jianming Lei1, Nan Wang2, Rukai Jiang2
1School of Electrical Engineering, Nanjing Vocational University of Industry Technology, Nanjing 210023, China.
Micromachines
|October 28, 2023
概括
这项研究研究了对化 (GaN) 设备的α粒子辐射效应. 结果显示,辐射诱导的泄漏电流变化取决于偏差和粒子能量,与改变的被困状态密度有关.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 辐射的影响 辐射效应
背景情况:
- 化 (GaN) 是一种辐射硬化半导体,具有出色的性能.
- 之前的研究重点是辐射导致的性能恶化,但缺乏对能量转移和降解机制的定量分析.
研究的目的:
- 量化分析阿尔法粒子辐射对GaN装置泄漏电流的影响.
- 建立一个验证的设备模型来模拟这些效应.
- 了解辐射诱导的电气性质退化背后的机制.
主要方法:
- 一个α粒子探测器的制造.
- 使用基本电气实验开发和验证一个设备模型.
- 模拟阿尔法粒子辐射对不同偏差和粒子能量下的泄漏电流的影响.
主要成果:
- 泄漏电流显示最小的变化与增加的辐射流动性在低偏差.
- 在更高的偏差下,泄漏电流随着辐射流率的增加而减少.
- 在相同的流量时,粒子能量升高,单调地增加了泄漏电流.
结论:
- 在GaN活性层内被捕状态密度的辐射诱导的变化是导致观察到的电性质降解的原因.
- 这项研究提供了对GaN设备的α粒子辐射效应的定量理解.
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