使用CNTFETs的新型二级完全差异化的全通波器
Muhammad I Masud1, Iqbal A Khan1, Syed Abdul Moiz2
1Department of Electrical Engineering, College of Engineering and Islamic Architecture, Umm Al-Qura University, Makkah 21955, Saudi Arabia.
Micromachines
|October 28, 2023
概括
本研究介绍了一种使用碳纳米管场效应晶体管 (CNTFET) 的可调整全通波器电路. 拟议的设计实现了用于高频应用的广泛调范围,在深微米技术中展示了高效的性能.
科学领域:
- 电子 电子 电子 电子 电子 电子 电子
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 碳纳米管场效应晶体管 (CNTFET) 为先进的电路设计提供了独特的电子特性.
- 全通波器是信号处理中的关键组件,用于在没有振幅扭曲的情况下进行相位操纵.
- 可调节,低功耗,高频过器的开发对于现代电子系统至关重要.
研究的目的:
- 介绍一种基于CNTFETs的新型二级完全差分全通波器电路.
- 通过结合基于 CNTFET 的 varactors,引入一个只能调节的活跃过器拓.
- 为了证明拟议的过电路的可调性和性能.
主要方法:
- 使用 CNTFET 晶体管和接地电容器设计和模拟二级完全差异全通波器.
- 通过用基于 CNTFET 的 varactors 取代接地电容器,开发一种仅可调节的主动过器.
- 通过使用HPSPICE模拟与的CNTFET模型在16nm技术节点上验证电路运行和性能.
主要成果:
- 从15GHz到27.5GHz的波器调整能力通过控制变频器电容来实现.
- 证明了低压运行,低功耗消耗和高调节极频率的仅为主动电路.
- 模拟结果证实了理论预测,显示了深微米技术的高效过器性能.
结论:
- 拟议的基于CNTFET的二次完全差分全通波器提供高效和可调高频操作.
- 只有主动可调节的过器拓为先进的电子系统中可调节的过提供了实用解决方案.
- 该研究验证了CNTFETs在为未来技术实现高性能模拟过电路方面的有效性.
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