ALDTiO2

Aleksei V Almaev1,2, Nikita N Yakovlev1, Dmitry A Almaev1

  • 1Research and Development Center for Advanced Technologies in Microelectronics, National Research Tomsk State University, 634050 Tomsk, Russia.

Micromachines
|October 28, 2023
PubMed
概括

增强等离子体原子层沉积 (ALD) 显著提高二氧化 (TiO2) 薄膜对氧气,气和二氧化等气体的敏感性. 这些增强的TiO2膜显示出高气体反应,特别是在500°C时.

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