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对SiC/Si VDMOS的SiC/Si异质连接带能量和接口状态特征的分析
Xin Yang1, Baoxing Duan1, Yintang Yang1
1Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi'an 710071, China.
Micromachines
|October 28, 2023
概括
这项研究优化了使用断裂点转移技术 (BPT) 的碳化/ (SiC/Si) VDMOS. 结果显示,通过分析接口状态,故障电压 (BV) 显著改善,并减少了启动电阻 (R).
科学领域:
- 电力电子 电力电子 电力电子
- 半导体设备 半导体设备
- 材料科学 材料科学 材料科学
背景情况:
- 碳化/ (SiC/Si) 和化/ (GaN/Si) 异质连接对于功率半导体设备至关重要.
- 之前的工作引入了SiC/Si VDMOS和GaN/Si VDMOS结构.
研究的目的:
- 使用故障点传输技术 (BPT) 优化SiC/Si VDMOS.
- 深入分析SiC/Si异质连接接口状态对VDMOS电气和能量频段特征的影响.
- 研究接口状态对电容和开关性能的影响.
主要方法:
- 使用故障点传输技术 (BPT) 优化SiC/Si VDMOS.
- 模拟电气参数 (故障电压,电阻,电场,阻塞,输出,传输特征).
- 在不同温度和接口电荷度下分析能量频段特征和设备性能.
主要成果:
- 与Si VDMOS相比,故障电压 (BV) 从259V增加到1144V;电阻 (R) 从18.2mΩ·cm2降至6.03mΩ·cm2.
- 增加的界面受体度引入了p型陷层,增加了BV,但也增加了R.
- 界面供体电荷增加了电子电流,减少了R;模拟了温度变化.
结论:
- BPT有效地优化SiC/Si VDMOS,显著增强BV并减少R.
- SiC/Si异质连接接口状态极大地影响设备性能,包括BV,R和开关特性.
- 了解和控制接口状态是设计先进SiC/Si电源设备的关键.
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