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一个使用InP技术的110-170 GHz宽带LNA设计,用于特拉赫兹通信应用

Lian Hu^1,2, Ziqiang Yang^1,2, Yuan Fang³

¹School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China.

|October 28, 2023

概括

这项研究介绍了一种用于太赫兹通信的新型五级低噪声放大器 (LNA). 利用InP HEMT技术和分阶段调,它实现了高级无线系统的高收益和宽带宽.

科学领域:

电气工程电气工程
电信工程电信工程电信工程
固态电子固态电子

背景情况:

太赫兹 (THz) 通信系统需要高性能放大器来进行信号放大.
现有的低噪声放大器 (LNA) 面临着在THz频率上实现高增益和宽带宽的挑战.
半导体技术的进步,如化高电子移动性晶体管 (InP HEMT),为改进的THz组件提供了潜力.

研究的目的:

设计和验证一种针对太赫兹通信系统优化的新型低噪声放大器 (LNA).
使用先进的电路设计技术,实现高增益,宽带宽和低噪声.
通过电磁模拟来证明拟议的LNA设计的可行性.

主要方法:

使用五级放大结构来增强整体增益.
实现了分阶调技术,以实现广泛的运行带宽.
电容器用于分阶段隔离,部门线用于射频绕道,微条线用于匹配电路.
为了验证LNA电路性能,进行了精确的电磁模拟.

主要成果:

模拟的LNA在140 GHz实现了25dB的小信号增益.
获得的噪声值为4.4dB,表明噪声放大率低.
输入的1dB压缩点 (P1dB) 测定为19dBm.
实现了60GHz的显著3dB带宽,覆盖了110-170GHz的频率范围.

结论:

拟议的五阶段LNA设计有效地满足了太赫兹通信系统的苛刻要求.
结合InP HEMT技术,分阶调和优化的电路元件,可以获得高增益和宽带宽.
模拟结果验证了设计的有效性及其在未来THz系统中实际实施的潜力.

关键词:

在 InP HEMT 里在 LNA LNA LNA 中.高增益的高增益获得.太赫兹 (Terahertz) 是一个频率.宽带宽带是什么意思

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