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对 GaN 高电子流动性晶体管单事件短暂效应的模拟

Zhiheng Wang^1,2, Yanrong Cao^1,2, Xinxiang Zhang^1,2

¹School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China.

|October 28, 2023

概括

模拟显示高电子流动性化 (GaN) 晶体管 (HEMT) 在离位状态下更容易受到单次事件的短暂影响,特别是在排水附近. 增加的排水电压和线性能量转移 (LET) 加剧了这些影响.

科学领域:

半导体设备物理学半导体设备物理
电子产品中的辐射效应.
化 (GaN) 的材料科学

背景情况:

高电子移动性的化 (GaN) 晶体管 (HEMT) 是现代电子产品中的关键组件.
了解它们对单一事件效应 (SEE) 的易感性对于辐射环境中的可靠性至关重要.
单一事件的短暂事件 (SET) 可以破坏设备的运行.

研究的目的:

调查各种参数对GaN HEMT中单一事件短暂效应的影响.
确定SETs最敏感的操作条件和设备区域.
为设计辐射硬化GaN设备提供洞察力.

主要方法:

使用Silvaco TCAD对GaN HEMT结构进行二维模拟.
纳入基本模型,包括运营商移动性.
设备状态,冲击位置,排水电压,线性能量转移 (LET) 值和冲击角度的系统变化.

主要成果:

单一事件的短暂效应在离状态时比在状态时更明显.
靠近排水的区域对单一事件的影响敏感度最高.
峰值短暂电流随着排水偏差和事件离子LET的增加而升级.
排水电荷收集时间延长,重离子的入射角更大.

结论:

GaN HEMT对单一事件过渡的状态依赖的敏感性,非状态更容易受到伤害.
设备位置和运行参数,如排水电压和LET显著影响SET严重性.
发生离子角度影响电荷收集动态,影响短暂的行为.

关键词:

获得了HEMTs.收取收费的收费方式是:收取收费.单一事件的过渡性影响.

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