对所有IV组SiGeSn中红外激光器的研究,具有双波长发射
Grey Abernathy1,2, Solomon Ojo1,2, Abdulla Said1,2
1Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
Scientific reports
|October 29, 2023
概括
这项研究证明了-锡 (GeSn) 激光器的双波长激光,这是基板上的单体集成的关键进步. 这些发现为上的所有IV组激光器铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 半导体物理 半导体物理
背景情况:
- -锡 (GeSn) 合金正在成为直接带隙激光器的有希望的材料.
- 激光器在基板上的单立体集成是光子设备的重要目标.
研究的目的:
- 为了研究光学送的中红外GESN激光器.
- 在基于GeSn的结构中实现和分析双波长激光.
主要方法:
- 无GeSn缓冲层和使用化学蒸气沉积的SiGeSn/GeSn多个量子井结构的生长.
- 光学试验用于诱导和测量激光特征.
主要成果:
- 在2187nm和2460nm的双波长激光的观测.
- 双激光来自不同的GeSn缓冲区 (散装) 和SiGeSn/GeSn多个量子井区域.
- 在420kW/cm2的值功率密度下观察到双激光的开始.
- 更宽的带隙SiGeSn分隔屏障促进了两个增益区域的独立运行.
结论:
- 这项研究是朝着在上单立体集成的所有IV组双波长激光器的发展迈出的重要一步.
- 虽然两个多个量子井区域的优化设计可能会提供更低的值,但这些初步结果是有希望的.
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