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Updated: Jul 12, 2025

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校正:AU / Al-doped ZnO / p-Si / Al异构的增强光电行为:阻抗和电流电压分析的见解

Majdi Benamara1, Kais Iben Nassar2, Sonia Soltani3

  • 1Laboratory of Physics of Materials and Nanomaterials Applied to the Environment, Faculty of Sciences of Gabes, University of Gabes Erriadh 6079 Gabes Tunisia majdibenamara1@gmail.com.

RSC advances
|October 30, 2023
PubMed
概括

这项研究纠正了先前发表的一篇文章DOI. 校正确保了科学研究的准确引用和引用.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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