高斯式和高斯式脉冲式的费米速度石墨烯结构
H García-Cervantes1, G J Escalera Santos2, F J García-Rodríguez3
1Tecnologías Emergentes Industriales e Informáticas, Universidad Tecnológica de León, Blvd. Universidad Tecnológica 225, San Carlos la Roncha, 37670 León, Guanajuato, Mexico.
概括
石墨烯中的高斯结构充当电子过器,使可调节的带通过器和振荡导电能力成为可能. 这些结构可以控制单层石墨烯设备中的电子传输特性.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 高斯式和相关结构提供了多功能电子运输调制.
- 为石墨烯中的费米速度障碍物探索了非传统的配置.
- 单层石墨烯的独特电子特性适合于新型设备应用.
研究的目的:
- 调查高斯费米速度石墨烯障碍物 (G-FVGBs) 作为电子带通过器.
- 分析可调节导电性的高斯脉冲类费米速度石墨烯超网格 (GPL-FVGSLs).
- 探索这些新型石墨烯结构的传输和运输特性.
主要方法:
- 使用连续模型进行理论研究.
- 转移矩阵方法的应用.
- 通过Landauer-Büttiker形式主义进行分析.
主要成果:
- G-FVGB 显示可调节的,几乎平坦的传输通道带.
- 通过带质量随着费米速度比 (ξmax) 的增加而改善,但范围减少.
- GPL-FVGSL显示高传输区域,可以形成小频段并产生电导振荡.
- 导电性在很大程度上独立于系统大小,因为过的和.
结论:
- G-FVGB和GPL-FVGSL的功能是有效的电子过器和可调节的导电装置.
- 系统参数,包括费米速度比和超网格配置,允许精确控制.
- 这些发现为基于工程石墨烯结构的先进电子设备开辟了可能性.
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