在表轴La2/3Sr1/3CoO3/La2/3Sr1/3Sr1/3MnO3异构结构中调节平面内磁异位和接口交换合
Mingzhen Feng1, Nolan Ahlm1, Dayne Y Sasaki1
1Department of Materials Science and Engineering, University of California, Davis, Davis, California 95616, United States.
ACS applied materials & interfaces
|November 1, 2023
概括
研究人员通过调整氧化 (LSCO) 的厚度来调整铁磁 (FM) 层中的磁性特性. 这种对磁晶异构和界面交换合的控制是旋转器件的关键.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 在铁磁 (FM) 层中控制平面内磁晶异构和接口交换合对于先进的自旋和磁性存储器件至关重要.
- 二氧化 (LSCO) 和二氧化 (LSMO) 的二层层是这些应用的有希望的材料.
研究的目的:
- 为了研究调整LSCO和LSMO层的磁晶异构的效果.
- 探索LSCO层厚度对LSCO/LSMO双层界面交换合的影响.
- 建立一种通过接口工程来控制磁性质的方法.
主要方法:
- 在 (110) 导向的 NdGaO3 基板上,LSCO/LSMO 双层在不同 LSCO 厚度 (1-10 nm) 和固定的 LSMO 厚度 (6 nm) 的间接增长.
- 使用柔软的X射线磁圆二元化 (XMCD) 歇斯底里循环测量平面内磁性异构性.
- 对磁性容易轴,强制性和交换偏差效应的分析.
主要成果:
- 尽管网格不匹配最小,但观察到明显的平面内磁性异构性.
- 对于LSCO厚度≤4nm,轻轴与[001]对齐,显示LSCO和LSMO中磁性活性CO2+之间的强合,没有观察到交换偏差.
- 对于LSCO厚度> 4nm,LSMO轻松轴旋转到[11̅0],导致显著的负交换偏移,表明可调节的接口合.
结论:
- 这项研究展示了一种方法,通过精确调整LSCO层厚度来控制LSCO/LSMO双层中的磁晶异性和交换偏差.
- 接口交换合的这种可调性为设计具有定制磁性特性的下一代自旋电子设备提供了一条途径.
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