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Updated: Jul 12, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

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Published on: January 19, 2018

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在碳纳米管晶体管中进行带对带道泄漏电流的表征和投影

Qing Lin1, Carlo Gilardi1, Sheng-Kai Su2

  • 1Dept. of Electrical Engineering, Stanford University, Stanford, California 94305, United States.

ACS nano
|November 1, 2023
PubMed
概括

这项研究分析了碳纳米管 (CNT) 晶体管的脱状态泄漏,这对于提高设备性能至关重要. 结果指导了在CNT金属氧化物半导体场效应晶体管 (MOSFET) 中减少泄漏电流的最佳设计选择.

关键词:
一个叫做 MOSFET 的设备.乐队间隙 乐队间隙 乐队间隙带对带的道化道.碳纳米管的使用方法扩展兴奋剂 扩展兴奋剂泄漏电流的情况供应电压提供供应电压.

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