可调节的性能全氧化物结构场效应晶体管基于原子层沉积的Hf-doped In2O3薄膜
Jiyuan Zhu1, Shen Hu1, Bojia Chen1
1School of Microelectronics, Fudan University, Shanghai 200433, China.
The Journal of chemical physics
|November 2, 2023
概括
氧化 (IHO) 薄膜使用原子层沉积进行沉积,有效调整先进的全氧化晶体管的载体度. 这种方法提高了后端整合的性能和稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术纳米技术
背景情况:
- 将晶体管迁移到后端 (BEOL) 能够实现新的功能和死亡区域.
- 氧化物半导体,特别是氧化物 (In2O3),对BEOL应用具有前景.
- 在In2O3中高的内在载体度限制了其使用.
研究的目的:
- 开发一种调整In2O3.3的内在载体度的方法.
- 为了改善晶体管特性,研究In2O3 (IHO) 薄膜中的哈夫 (Hf) 兴奋剂.
- 使用优化的IHO材料制造和表征全氧化物晶体管.
主要方法:
- 原子层沉积 (ALD) 用于沉积Hf-doped In2O3 (IHO) 薄膜.
- 对Hf的兴奋剂度进行了系统的变化,以调整膜的特性.
- 全氧化物晶体管是使用优化的In2O3:HfO2比率 (10:1) 制造的,采用无Au的工艺.
主要成果:
- Hf兴奋剂有效地降低了In2O3膜中的内在载体度.
- 优化的In2O3:HfO2 (10:1) 晶体管表现出高的电流 (249 μA) 和场效应移动性 (13.4 cm2/V·s).
- 实现了优异的开/关比 (>10^6) 和在偏移应力下的稳定性.
结论:
- 通过ALD进行Hf兴奋剂是一种有效的策略,可以控制In2O3.3.中的载体度.
- 开发的IHO材料和全氧化物晶体管显示了BEOL集成的巨大潜力.
- 这项工作促进了未来电子设备的强大和高性能全氧化物晶体管的开发.
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