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Updated: Oct 2, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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由于少数层MoS2的异构结构和基于氧化石墨烯减少光电探测器的高灵敏度和速度,摄影引发了高灵敏度和速度

Chayan Das1, Ashok Kumar2, Suresh Kumar1

  • 1Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, India. satyajit@iitj.ac.in.

Physical chemistry chemical physics : PCCP
|November 2, 2023
PubMed
概括

减少的石墨烯氧化物 (rGO) 装饰显著增强二硫化物 (MoS2) 光电子设备. rGO/MoS2异质连接显示了改善的光暗电流比率,更快的响应时间,以及用于先进应用的出色稳定性.

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相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...