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Updated: Jul 11, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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启用PZT的MoS2浮动门晶体管:克服博尔兹曼暴政,实现超低能耗,实现高精度神经形态计算

Jing Chen1,2, Ye-Qing Zhu3, Xue-Chun Zhao3

  • 1Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China.

Nano letters
|November 6, 2023
PubMed
概括

研究人员使用支持PZT的MoS2浮动门开发了一种新型晶体管,实现低下值摆动 (SS) 和宽内存窗口,以实现高效的人工智能硬件. 这项创新能够实现高度准确的面部识别.

关键词:
低能耗,低能耗的电力使用.低子值旋转晶体管的低子值这些神经形态设备是神经形态设备.这是二维材料的二维材料.广泛的歇斯底里斯窗口.

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