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在h-BN中识别发光空缺,这些空缺是使用受控He+离子辐射生成的

Soumya Sarkar¹, Yue Xu¹, Sinu Mathew²

¹Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.

|November 6, 2023

概括

研究人员使用离子束在六角化 (h-BN) 中可控地引入空缺. 这为可扩展的量子光子学应用创造了强大的1.55 eV光发光.

科学领域:

材料科学材料科学材料科学
量子光子学量子光子学
固态物理固态物理

背景情况:

在1.55 eV的六角化 (h-BN) 中的缺陷排放对于光学旋转读数至关重要.
在不改变h-BN的原子结构的情况下,对h-BN的点缺陷的控制引入具有挑战性.

研究的目的:

在h-BN中可控地引入空缺.
为了实现1.55 eV的强大的光发光辐射.
为了实现可扩展的量子光子学应用.

主要方法:

使用具有超高空间分辨率的低能He+离子束控制引入空缺.
优化+离子辐射条件以控制缺陷数量和位置.
使用光发光谱学和电子能量损失谱学 (EELS) 进行表征.

主要成果:

从10K到室温,在1.55 eV的强大的光发光辐射得到了实现.
控制缺陷的空间分布和深度.
在1295厘米-1处发现了一种新的拉曼模式,与空缺有关.
通过EELS.确认了引入空缺,而不会通过EELS.修改当地的h-BN晶体结构.

结论:

开发了一种确定性策略,用于在h-BN中创建可扩展的空位排放器.
该方法使量子应用的点缺陷精确工程成为可能.
这项工作为基于h-BN的先进量子光子设备铺平了道路.

关键词:

缺陷排放的缺陷排放是什么离子显微镜的离子显微镜.六角性的化.离子辐射辐射的离子辐射.旋转缺陷旋转缺陷旋转缺陷

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