范德瓦尔斯的石墨烯-In2Se3异质连接神经电阻器用于光学内存双模操作的双模操作
Subhrajit Mukherjee1, Debopriya Dutta1, Anurag Ghosh1
1Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
ACS nano
|November 6, 2023
概括
本研究介绍了一种用于光学神经网络 (ONN) 的新型2D异构装置. 铁电α-In2Se3和石墨烯晶体管提供可重新配置的内存和逻辑功能,为先进的神经形态计算铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 设备物理 设备物理
背景情况:
- 在单个设备层面的功能多样化对于光学神经网络 (ONN) 的发展至关重要.
- 具有光敏感性的铁电材料对超薄的神经形态装置有希望.
研究的目的:
- 为了展示一个基于万德瓦尔斯异构结构的全二维可编程突触场效应晶体管 (FET).
- 探索设备的可重新配置,多级非挥发性内存 (NVM) 状态,通过光学和电气刺激调节.
- 为了研究设备在轻光照明下在挥发性和非挥发性逻辑操作之间切换的能力.
主要方法:
- 使用铁电 α-In2Se3 纳米板和单层石墨烯制造一个异构的 FET.
- 使用双模式 (光学和电气) 刺激对NVM状态进行调制.
- 通过电子传输和凯尔文探针力显微镜 (KPFM) 描述设备操作机制.
主要成果:
- 该设备显示了可重新配置的,可通过双模式刺激控制的多层NVM状态.
- 在光下,该设备可以在光探测器 (挥发性) 和光学随机访问存储器 (ORAM) (非挥发性) 之间切换.
- 从短期特征到长期特征的可塑性调节在广泛的动态范围内被证明.
结论:
- 协同作用的铁光子异构结构特性使集成处理器和ORAM系统具有强大的光电子重量可控性.
- 提出的结果有助于实现用于下一代感知,光电子逻辑系统和物联网实体的多功能全2D异构突触.
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