脉冲激光化的Ge1-Sn中点缺陷的演变,通过正子灭绝寿命光谱检测
O Steuer1,2, M O Liedke3, M Butterling3
1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany.
概括
-锡合金的脉冲激光化通过增加空位聚合物来降低整体缺陷密度. 这一过程还减少了应变,并影响了锡原子的行为,影响了纳米电子材料的材料特性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术 纳米技术
背景情况:
- -锡 (GeSn) 合金对于先进的纳米和光电子非常重要,因为它们具有直接的带隙和高载体流动性.
- 控制开放体积缺陷,如空位,对于优化 GeSn 设备性能至关重要.
- 增长后的处理对于 GeSn 薄膜的缺陷工程至关重要.
研究的目的:
- 为了研究脉冲激光融 (PLM) 对分子光束-表皮成长的 GeSn 薄膜中的点缺陷的影响.
- 在不同激光能量密度下分析纳米结构和缺陷演变.
- 为了将缺陷变化与应变降低和锡的行为相关联.
主要方法:
- 利用多普勒扩展和可变能量正子灭绝寿命光谱来探测缺陷纳米结构.
- 为了支持实验发现,采用了ATomic SUPerposition计算.
- 应用纳秒范围脉冲激光化 (PLM) 在不断增加的能量密度.
主要成果:
- PLM治疗导致开放体积缺陷 (空积聚体) 的平均大小增加.
- 随着PLM流动性的增加,整体缺陷密度下降.
- 定子灭绝光谱学揭示了Sn-装饰的Ge空缺和位移,位移将Sn捕获并形成富含Sn的星团.
- PLM被证明可以降低GeSn层内的应变.
结论:
- 脉冲激光融有效降低GeSn合金中的缺陷密度和应变.
- PLM过程影响缺陷聚类和锡原子分布,为材料属性调节提供了一条途径.
- 在PLM下了解缺陷动态是开发高性能基于GeSn的电子设备的关键.
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