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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Ap类型的可多超宽带间氧化物.

John L Lyons1, Anderson Janotti2

  • 1Center for Computational Materials Science, US Naval Research Laboratory, Washington, DC 20375, United States of America.

Journal of physics. Condensed matter : an Institute of Physics journal
|November 6, 2023
PubMed
概括

超宽带间隙 (UWBG) 半导体因自陷孔而难以达到p型导电性. 鲁二氧化 (r-SiO2) 显示了有效的p型兴奋剂的潜力,与其他UWBG氧化物不同.

科学领域:

  • 材料科学 材料科学 材料科学
  • 固态物理 固态物理
  • 半导体研究 半导体研究

背景情况:

  • 超宽带间隙 (UWBG) 半导体通常表现出单极兴奋剂,限制了它们的应用潜力.
  • 在UWBG氧化物中实现p型导电性是具有挑战性的,原因是形成了自我陷入的孔 (小极子).
  • 鲁氧化 (r-GeO2) 最近被提出作为一种潜在的材料来克服这一局限性,但具有较高的接受电离能.

研究的目的:

  • 为了研究rutile二氧化 (r-SiO2) 对p型导电性的潜力.
  • 为了比较r-SiO2与其他鲁氧化物 (TiO2,SnO2,GeO2) 关于孔陷和受体电离的特性.
  • 评估r-SiO2作为高效的p型兴奋剂的有希望的UWBG材料的可行性.

主要方法:

  • 利用混合密度函数计算来研究各种鲁氧化物的电子性质.
  • 分析了受受体合的鲁结构中的孔捕获机制和受体电离能.
  • 计算了杂质形成能量,以评估氧气空缺等原生缺陷的补偿效应.

主要成果:

  • 鲁二氧化 (TiO2) 和二氧化 (SnO2) 在接受器杂质上表现出强烈的孔陷,这与之前的研究一致.
  • 发现自我陷的孔在r-SiO2中不稳定,r-SiO2具有大约8.5 eV的宽带间隙.
关键词:
第一个原则是计算计算.p型导电性的导电性.在p型兴奋剂中使用p型兴奋剂.超宽带隙氧化物超宽带隙氧化物

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  • r-SiO2在研究的鲁氧化物中显示出III组受体电离能最低,相当于化 (GaN).

    • 结论:

    • 露二氧化 (r-SiO2) 成为在超宽带隙氧化物中实现高效的p型导电性的有希望的候选者.
    • 自陷孔的不稳定性和r-SiO2中的低接受电离能使其成为UWBG材料中潜在的异常值.
    • 在r-SiO2中的受体杂质具有足够低的形成能量,这表明在富含氧气的条件下,氧气空缺的补偿是最小的.