在铜网上生长的石墨烯纳米墙
Abdeldjalil Reguig1, Badri Vishal1, Jasmin Smajic1
1Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
Nanotechnology
|November 6, 2023
概括
晶圆尺度图案的石墨烯纳米墙 (GNWs) 在使用低功率PECVD的铜网上生长. 这些疏水性GNWs膜显示出改变表面湿的潜力,并作为离子电池中的阳极.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 表面科学是一门学科.
背景情况:
- 石墨烯纳米墙 (GNWs) 是在基板上垂直生长的石墨碳纳米板.
- 传统的GNWs薄膜制造通常需要昂贵的清洁室程序,用于有图案的基板.
- 增强等离子体化学蒸汽沉积 (PECVD) 是GNWs增长的一个常见技术.
研究的目的:
- 用一种经济有效的方法开发晶圆尺度图案GNWs片.
- 描述这些有图案的GNWs膜的结构,转移和特性.
- 探索GNWs膜在表面修饰和能量储存中的应用.
主要方法:
- 使用低功率直流PECVD在铜网上种植GNW.
- 通过使用网状结构作为模板来实现晶圆尺度的图案.
- 描述包括分析薄膜形态,微观结构和湿性质. 应用测试包括离子电池阳极性能.
主要成果:
- 垂直对齐的GNWs地毯 (~300nm高度) 已成功生长,复制了铜网格尺寸.
- 在相同条件下在铜上生长导致了有限的沉积.
- 转移的GNWs膜表现出疏水性,并改变了SiO2表面的湿行为.
- 在离子电池中,GNWs膜证明了其作为C-on-Cu阳极的活性材料的实用性.
结论:
- 铜网上的低功率PECVD提供了一个可扩展和具有成本效益的途径,用于图案GNWs膜.
- 由此产生的GNWs膜具有独特的疏水特性,适合表面工程.
- 有图案的GNWs膜对先进的应用有希望,包括离子电池阳极.
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