在患有头骨缺陷和头骨板植入体的患者中,对经磁刺激的计算分析

Minmin Wang1, Li Zhang2

  • 1Key Laboratory of Biomedical Engineering of Education Ministry, Department of Biomedical Engineering, School of Biomedical Engineering and Instrument Science, Zhejiang University, Hangzhou, China; Binjiang Institute of Zhejiang University, Hangzhou, China.

概括

计算分析显示,头骨缺陷显著改变了跨磁刺激 (TMS) 诱导的电场 (EF). 植入物增加峰值EF并改变其分布,强调在TMS中需要考虑这些因素.